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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220Fa package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3866 Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER CHA IN Collector current Base current Collector-base voltage E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 900 800 10 3 1 UNIT V V V A A W ae ae Open emitter Collector-emitter voltage Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IE=1mA , IC=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=900V; IE=0 VEB=10V; IC=0 IC=1A ; VCE=5V 10 MIN 800 900 10 2SC3866 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 V V mA mA Switching times ton ts tf Fall time Turn-on time Storage time INC E SEM ANG H OND IC TOR UC 1.0 4.0 0.8 |I |I |I s s s IC=2A; IB1=0.4A IB2=-0.8A;RL=150| Pw=20|I s,DutyU 2% 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3866 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 CHA IN E SEM NG OND IC TOR UC 4 |
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